Malaviya National Institute of Technology Jaipur
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Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm and 16nm Technology Using Silvaco Atlas…
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- M. Tech. Dissertation of MNIT Jaipur
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- Electronics & Communication Engineering
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- Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm And 16nm Technology Using Silvaco Atlas…
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Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm And 16nm Technology Using Silvaco Atlas… [1]
Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm and 16nm Technology Using Silvaco Atlas…