Malaviya National Institute of Technology Jaipur
Institutional Digital Repository
Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm and 16nm Technology Using Silvaco Atlas…
- IDR MNIT
- →
- M. Tech. Dissertation of MNIT Jaipur
- →
- Electronics & Communication Engineering
- →
- Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm And 16nm Technology Using Silvaco Atlas…
- →
- View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.
| dc.contributor.author | Mehta, Kinnal | |
| dc.date.accessioned | 2021-01-28T03:57:35Z | |
| dc.date.available | 2021-01-28T03:57:35Z | |
| dc.date.issued | 2017-06-01 | |
| dc.identifier.govdoc | 2015PEV5279 | |
| dc.identifier.uri | http://hdl.handle.net/123456789/879 | |
| dc.language.iso | en | en_US |
| dc.publisher | MNIT Jaipur | en_US |
| dc.title | Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm and 16nm Technology Using Silvaco Atlas… | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.guide | Varma, Dr. Tarun |
Files in this item
This item appears in the following Collection(s)
-
Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm And 16nm Technology Using Silvaco Atlas… [1]
Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm and 16nm Technology Using Silvaco Atlas…