Please use this identifier to cite or link to this item:
http://idr.mnit.ac.in/jspui/handle/123456789/879| Title: | Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm and 16nm Technology Using Silvaco Atlas… |
| Authors: | Mehta, Kinnal Varma, Dr. Tarun |
| Issue Date: | 1-Jun-2017 |
| Publisher: | MNIT Jaipur |
| Gov't Doc #: | 2015PEV5279 |
| URI: | http://hdl.handle.net/123456789/879 |
| Appears in Collections: | Parameter Evaluation And Simulation Of Junctionless Double Gate MOSFET Using Si, Ge And In0.53Ga0.47As Substrate with Different Dielectric Materials At 65nm, 45nm, 22nm And 16nm Technology Using Silvaco Atlas… |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| 2015PEV5279-Kinnal Mehta.pdf | 2015PEV5279-Kinnal Mehta | 4.28 MB | Adobe PDF | View/Open |
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